An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs-Reference-Cited by-同舟云学术

An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

Published:2024 Issue: Volume:12 Page:14238-14247
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Memon Qamar-Ud-Din¹^ORCID,Rehman Saif Ur²^ORCID,Bashir Muhammad Adil³,Memon Noor Muhammad⁴,Haq Mohd Anul⁵^ORCID,Alharby Sultan⁵,Alhussen Ahmed⁶^ORCID,Rehman Ateeq Ur⁷^ORCID

Affiliation:

1. Department of Software Engineering, Bahria University, Karachi, Pakistan

2. Department of Engineering and Technology, Superior University, Lahore, Pakistan

3. Department of Electrical Engineering, Bahauddin Zakariya University, Multan, Pakistan

4. Department of Electrical Engineering, Isra University, Hyderabad ISRA University, Hyderabad, Pakistan

5. Department of Computer Science, College of Computer and Information Sciences, Majmaah University, Al Majma’ah, Saudi Arabia

6. Department of Computer Engineering, College of Computer and Information Sciences, Majmaah University, Al Majma’ah, Saudi Arabia

7. Department of Electrical Engineering, Government College University, Lahore, Pakistan

Funder

Deanship of Scientific Research at Majmaah University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10379678.pdf?arnumber=10379678

Reference28 articles.

1. Moore's law: the future of Si microelectronics

2. Sub-50 nm P-channel FinFET

3. FinFET design considerations based on 3-D simulation and analytical modeling

4. Recent trend of FinFET devices and its challenges: A review

5. Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation;Transactions on Electrical and Electronic Materials;2024-05-11