Author:
Latry O.,Dherbécourt P.,Mourgues K.,Maanane H.,Sipma J.P.,Cornu F.,Eudeline P.,Masmoudi M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Design for reliability: the RF power LDMOSFET;Souza;IEEE Trans Dev Mater Reliab,2007
2. Burger WR. Recent advances in RF-LDMOS high-power IC development. In: 2009 IEEE international conference on IC design and technology, IEEE; 2009. p. 35–8.
3. Optimizing the hot carrier reliability of N-LDMOS transistor arrays;Brisbin;Microelectron Reliab,2005
4. Mohapatra NR, Ehwald KE, Barth R, Rucker H, Bolze D, Schley P, et al. The impact of channel engineering on the performance and reliability of LDMOS transistors. In: Proceedings of 35th European solid-state device research conference, 2005. ESSDERC 2005, IEEE; 2005. p. 481–4.
5. A 3000hours DC life test on AlGaN/GaN HEMT for RF and microwave applications;Sozza;Microelectron Reliab,2005
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献