Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies-Reference-Cited by-同舟云学术

Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies

Published:2018-05 Issue: Volume:84 Page:1-6
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gajewski Donald A.,Ganguly Satyaki,Sheppard Scott,Wood Simon,Barner Jeff B.,Milligan Jim,Palmour John

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Reliability of GaN/AlGaN HEMT MMIC technology on 100-mm 4H-SiC;Gajewski,2011

2. GaN-on-SiC MMIC production for S-band and EW-band applications;Fury,2013

3. An optical 0.25-μm GaN HEMT technology on 100-mm SiC for RF discrete and foundry MMIC products;Wood,2013

4. Investigation and resolution of a very high Ea (threshold) failure mechanism in a 40 V GaN FET;Gajewski,2014

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress;IEEE Transactions on Electron Devices;2024-09

2. Study on the Degradation Mechanism of GaN MMIC Power Amplifiers Under On-State With High Drain Bias;IEEE Transactions on Electron Devices;2024-08

3. A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed;International Journal of High Speed Electronics and Systems;2024-02-23

4. Scaled Reliability Prediction Model for Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit;2024 Annual Reliability and Maintainability Symposium (RAMS);2024-01-22

5. Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16