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Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate

  • Published:2022-10-16 Issue: Volume: Page:
  • ISSN:
  • Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
  • language:
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Author:

Bothe Kyle M.1,King Matthew R.1,Guo Jia1,Liu Yueying1,Sriram Saptha1,Fisher Jeremy1,Sheppard Scott T.1,Noori Basim1

Affiliation:

1. Wolfspeed,RF Technology Development,Durham

Publisher

IEEE

Reference9 articles.

1. An Optical 0.25um GaN HEMT Technology on 100mm SiC for RF Discrete and Foundry MMIC Products;wood;CS Mantech,2013

2. Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design

3. Optically-Defined 150nm, 28-V GaN HEMT Process for Ka-Band;bothe;CS Mantech,2019

4. Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies

5. A Highly Integrated High Performance 36W Pulsed X-Band GaN IMFET Power Amplifier in a compact EHS Laminate Package
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