Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers-Reference-Cited by-同舟云学术

Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers

Published:2018-09 Issue: Volume:88-90 Page:961-964
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Petrov A.S.,Tapero K.I.,Ulimov V.N.,Chlenov A.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. ELDRS in bipolar linear circuits: a review;Pease;IEEE Trans. Nucl. Sci.,2009

2. Total dose effects in MOS devices;Schwank,2002

3. Comparison of irradiation at low dose rate and irradiation at elevated temperature to reveal ELDRS in bipolar linear circuits;Tapero,2015

4. Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing;Petrov;Microelectron. Reliab.,2014

5. Dose effects in CMOS operational amplifiers with bipolar and CMOS input stage at different dose rates and temperatures;Tapero,2015

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