Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation-Reference-Cited by-同舟云学术

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Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation

Published:2019-09 Issue: Volume:100-101 Page:113378
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Petrov A.S.,Tapero K.I.,Galimov A.M.,Zebrev G.I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. ELDRS in bipolar linear circuits: a review;Pease;IEEE Trans. Nucl. Sci.,2009

2. Response of advanced bipolar processes to ionizing radiation;Enlow;IEEE Trans. Nucl. Sci.,1991

3. Dependence of total dose response of bipolar linear micro-circuits on applied dose rate;McClure;IEEE Trans. Nucl. Sci.,1994

4. Total dose effects in conventional bipolar transistors and linear integrated circuits;Johnston;IEEE Trans. Nucl. Sci.,1994

5. Total dose effects on negative voltage regulator;Beaucour;IEEE Trans. Nucl. Sci.,1994

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