Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device-Reference-Cited by-同舟云学术

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Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device

Published:2018-05 Issue: Volume:84 Page:157-162
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Xu Zhaozhao^ORCID,Liu Donghua,Xiong Wei,Hu Jun,Duan Wenting,Chen Hualun,Qian Wensheng,Kong Weiran,Zou Shichang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Thickness dependence of stress-induced leakage currents in silicon oxide;Runnion;IEEE Trans. Electron Devices,1997

2. On the go with SONOS;White;IEEE Circ. Devices Mag.,2000

3. Overview of emerging nonvolatile memory technologies;Meena;Nanoscale Res. Lett.,2014

4. Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices;Xu;Solid State Electron.,2014

5. Junction optimization for embedded 40 nm FN/FN flash memory;Baiano,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on Vt Window Improvement Process of 2T Sonos Embedded Flash;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

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