Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies-Reference-Cited by-同舟云学术

Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies

Published:2018-09 Issue: Volume:88-90 Page:196-202
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Almeida R.B.,Marques C.M.,Butzen P.F.,Silva F.R.G.,Reis R.A.L.,Meinhardt C.

Funder

Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

National Research Council

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Comparative analysis of various 9 T SRAM cell at 22-nm technology node;Roy;IEEE ReTIS,2015

2. Designing reliable systems from unreliable components: the challenges of transistor variability and degradation;Borkar;IEEE Micro,2005

3. Defects tolerant logic gates for unreliable future nanotechnologies;Anghel,2007

4. Radiation-induced soft errors in advanced semiconductor technologies;Baumann;IEEE Trans. Device Mater. Reliab.,2005

5. Modeling and simulation of single-event effects in digital devices and ICs;Munteanu;IEEE Trans. Nucl. Sci.,2008

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