Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology-Reference-Cited by-同舟云学术

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Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology

Published:2023-08 Issue:8 Volume:70 Page:1673-1679
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Pieper N. J.¹^ORCID,Xiong Y.¹^ORCID,Pasternak J.²,Dodds N. A.³,Ball D. R.¹,Bhuva B. L.¹^ORCID

Affiliation:

1. Electrical and Computer Engineering Department, Vanderbilt University, Nashville, TN, USA

2. Synopsys, Mountain View, CA, USA

3. Sandia National Laboratories, Albuquerque, NM, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

https://ieeexplore.ieee.org/ielam/23/10221199/10032606-aam.pdf

Reference31 articles.

1. Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs

2. Radiation-induced soft errors in advanced semiconductor technologies

3. Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs

4. Characterization of Single Bit and Multiple Cell Soft Error Events in Planar and FinFET SRAMs

5. Study of multi-cell upsets in SRAM at a 5-nm bulk FinFET node;pieper;IEEE Trans Nucl Sci,0

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1. Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors;ACS Applied Electronic Materials;2024-07-17

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