Single-event transient effects on dynamic comparator in 28 nm FDSOI CMOS technology-Reference-Cited by-同舟云学术

Single-event transient effects on dynamic comparator in 28 nm FDSOI CMOS technology

Published:2018-09 Issue: Volume:88-90 Page:965-968
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Maciel N.,Marques E.C.,Naviner L.A.B.,Cai H.

Funder

Brazilian Ministry of Defense

Southeast University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Synergy of big data and 5G wireless networks: opportunities, approaches, and challenges;Zhang;IEEE Wirel. Commun.,2018

2. Compressed sensing;Donoho;IEEE Trans. Inf. Theory,2006

3. Hardware-algorithms co-design and implementation of an analog-to-information converter for biosignals based on compressed sensing;Pareschi;IEEE Trans. Biomed. Circuits Syst.,2016

4. Analog IC Reliability in Nanometer CMOS;Maricau,2013

5. Design of low-power high-speed double-tail dynamic CMOS comparator using novel latch structure;Jain,2017

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Voltage Comparator with High Voltage to Time Gain for ADC Applications;Lecture Notes in Networks and Systems;2024

2. Design and analysis of a SET tolerant single-phase clocked double-tail dynamic comparator;Analog Integrated Circuits and Signal Processing;2022-06-11

3. Model and analysis of single event transient sensitivity based on uncertainty quantification;Microprocessors and Microsystems;2022-04

4. Dynamic Comparator Design for High Speed ADCs;2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT);2022-02-16

5. Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology;IEEE Transactions on Nuclear Science;2020-01