Reliability and reliability investigation of wide-bandgap power devices-Reference-Cited by-同舟云学术

Reliability and reliability investigation of wide-bandgap power devices

Published:2018-09 Issue: Volume:88-90 Page:550-556
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lutz Josef,Franke Jörg

Funder

Federal Ministry of Education and Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Semiconductor Power Devices-Physics, Characteristics, Reliability;Lutz,2018

2. Repetitive surge current test of SiC MPS diode with load in bipolar regime;Palanisamy,2018

3. Performance and ruggedness of 1200 V SiC - trench - MOSFET;Peters,2017

4. Reliability evaluation;Lutz,2018

5. Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage;Beier-Möbius,2016

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Bias-Temperature Instability Testing in SiC MOSFETs;Solid State Phenomena;2024-08-26

2. Development of a Computational Fluid Dynamics Model to Evaluate the Thermal Resistance of a SiC Power Module Under Several Operating Condition;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

3. Study on the Influence Mechanism of Gate Oxide Degradation on Dm Emi Signals in Sic Mosfet;2024

4. A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress;Microelectronics Reliability;2023-11

5. Degradation monitoring of SiC MOSFET gate-oxide based on differential mode conducted interference spectrum;Microelectronics Reliability;2023-01