Implications of electron beam irradiation on Al/n-Si Schottky junction properties-Reference-Cited by-同舟云学术

Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Published:2018-12 Issue: Volume:91 Page:179-184
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Vali Indudhar Panduranga,Shetty Pramoda Kumara^ORCID,Mahesha M.G.,Petwal V.C.,Dwivedi Jishnu,Phase D.M.,Choudhary R.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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3. Electronic Properties of Semiconductor Interfaces;Mönch,2004

4. Physics of Semiconductor Devices;Sze,1981

5. Extraction of Schottky diode parameters from forward current-voltage characteristics;Cheung;Appl. Phys. Lett.,1986

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3. Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts;Vacuum;2020-02

4. Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations;Semiconductor Science and Technology;2019-08-12

5. Gamma irradiation effects on Al/n-Si Schottky junction properties;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-12