Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Author:

Vali Indudhar Panduranga,Shetty Pramoda Kumara,Mahesha M.G.,Petwal V.C.,Dwivedi Jishnu,Phase D.M.,Choudhary R.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference43 articles.

1. Silicon carbide in contention;Madar;Nature,2004

2. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

3. Contacts for Compound Semiconductors : Schottky Barrier Type, Reference Module in Materials Science and Materials Engineering;Brillson,2016

4. Metal‒Semiconductor Contacts;Rhoderick,1988

5. Analysis of Schottky barrier heights of metal/SiC contacts and its possible application to high‒voltage rectifying devices;Itoh;Phys. Status Solidi Appl. Res.,1997

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