Author:
Waltl Michael,Waldhoer Dominic,Tselios Konstantinos,Stampfer Bernhard,Schleich Christian,Rzepa Gerhard,Enichlmair Hubert,Ioannidis Eleftherios G.,Minixhofer Rainer,Grasser Tibor
Funder
Christian Doppler Forschungsgesellschaft
Bundesministerium für Digitalisierung und Wirtschaftsstandort
National Foundation for Science and Technology Development
Österreichische Forschungsförderungsgesellschaft
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. A charge-sheet model of the MOSFET;Brews;Solid State Electron.,1978
2. PSP: an advanced surface-potential-based MOSFET model for circuit simulation;Gildenblat;IEEE Trans. Electron. Devices,2006
3. Revisiting MOSFET threshold voltage extraction methods;Ortiz-Conde;Microelectron. Reliab.,2013
4. Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model;Li,2015
5. Statistical variability analysis of SRAM cell for emerging transistor technologies;Kurude;IEEE Trans. Electron. Devices,2016
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献