Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode-Reference-Cited by-同舟云学术

Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode

Published:2021-11 Issue: Volume:126 Page:114377
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Casu C.,Buffolo M.,Caria A.,De Santi C.,Zanoni E.,Meneghesso G.,Meneghini M.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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2. Degradation of InGaN-based LEDs: demonstration of a recombination-dependent defect-generation process;Renso;J. Appl. Phys.,2020

3. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents;Lu;J. Appl. Phys.,2013

4. Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes;Wang;Opt. Express,2011

5. Prestrained effect on the emission properties of InGaN/GaN quantum-well structures;Huang;Appl. Phys. Lett.,2006

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1. Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study;Light-Emitting Devices, Materials, and Applications XXVII;2023-03-14