Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process

Author:

Wan Caiping,Zhang Yuanhao,Lu Wenhao,Ge Niannian,Xu Hengyu,Ye Tianchun

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Defect engineering in SiC technology for high-voltage power devices;Kimoto;Appl. Phys. Express,2020

2. Silicon carbide: a unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015

3. Significant improvement in reliability of thermal oxide on 4H-SiC(0001) face using ammonia post-oxidation annealing;Junji;Mater. Sci. Forum,2010

4. Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures;Peng;Microelectron. Reliab.,2016

5. POCl3 anneling effect on the flat band voltage instabilities for a SiC based MOS capacitor at high temperature;Gavrila;Rom. J. Inf. Sci. Technol.,2014

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