Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate

Author:

Tang Shun-Wei,Chen Szu-Chia,Wu Tian-Li

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices,2017

3. The 2018 GaN power electronics roadmap;Amano;J. Phys. D. Appl. Phys.,2018

4. GaN on Si technologies for power switching devices;Ishida;IEEE Trans. Electron Devices,2013

5. Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime;Hua,2016

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