Author:
Zhou Y.,Cai H.,Zhang M.,Naviner L.A.B.,Yang J.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. The emergence of spin electronics in data storage;Chapper;Nature Mater,2007
2. A 1-Mb 28-nm 1T1MTJ STT-MRAM with single-cap offset-cancelled sense amplifier and in situ self-write-termination;Dong;IEEE J. Solid State Circuits,2019
3. CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications, 2017 Sym;Shum;VLSI Tech.,2017
4. 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell;Lin,2009
5. Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell;Lee,2010
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