An On-Line Aging Detection and Tolerance Framework for Improving Reliability of STT-MRAMs
Author:
Affiliation:
1. National Central University, Taoyuan, Taiwan
Funder
National Science and Technology Council
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3566097.3567908
Reference15 articles.
1. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy
2. Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses;Wang Y.;Microelectron.Rel.
3. Monitoring Aging Defects in STT-MRAMs
4. Basic principles of STT-MRAM cell operation in memory arrays;Khvalkovskiy A.V.;J. Phys. D: Appl. Phys,2013
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1. Reliability of Computing-In-Memories: Threats, Detection Methods, and Mitigation Approaches;2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT);2023-10-03
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