Author:
Nardo A.,Meneghini M.,Barbato A.,De Santi C.,Meneghesso G.,Zanoni E.,Sicre S.,Sayadi L.,Prechtl G.,Curatola G.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Reliability and failure analysis in power GaN-HEMTs: an overview;Meneghini,2017
2. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors;Meneghesso;Jpn. J. Appl. Phys.,2016
3. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications;De Santi;IET Power Electron.,2018
4. Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects;Meneghini,2019
5. A physical-statistical approach to AlGaN/GaN HEMT reliability;Moens,2019
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