A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories-Reference-Cited by-同舟云学术

A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

Published:2009-09 Issue:9-11 Volume:49 Page:1070-1073
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Roca M.,Laffont R.,Micolau G.,Lalande F.,Pizzuto O.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Nonvolatile semiconductor memory technology;Brown,1998

2. Tunneling injection temperature dependence in EEPROM cell;Zahi;J Non-Cryst Solids,2007

3. A new physical-based compact model of floating-gate EEPROM cells;Bouchakour;J Non-Cryst Solids,2000

4. Canet P, Bouchakour R, Harabech N, Boivin PH, Mirabel JM, Plossu C. Study of signal programming to improve EEPROM cell reliability In: 43rd IEEE symposium on circuits and systems, Lansing, Michigan, August 8-11; 2000.

5. Yield and reliability of NMOS EEPROM products;Kamigari;IEEE J Solid State Circ,1989

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EEPROM endurance degradation at different temperatures: State of the art TCAD simulation;Microelectronics Reliability;2022-09

2. Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors;Physica B: Condensed Matter;2020-05

3. Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis;Journal of Semiconductors;2017-10

4. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures;Journal of Applied Physics;2017-09-07

5. Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05