Author:
Ronchi N.,Zanon F.,Stocco A.,Tazzoli A.,Zanoni E.,Meneghesso G.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Wu Y-F, Moore M, Saxler A, Wisleder T, Parikh P. 40-W/mm double field-plated GaN HEMTs. In: IEEE device research conference; 2006. p. 151–2.
2. Lahreche H, Wilk A, Bove P, Lijadi M, Langer R, Thuret J, et al. Recent achievement in the AlGaN/GaN HEMT epitaxy on Silicon and Engineered Substrates exhibiting improved performances. In: 31st WOCSDICE, Venice, Italy; 2007.
3. Langer R, Faure B, Boussagol A, Bove P, Lahreche H, Wilk A, et al. Recent achievements in SopSiC substrates for high power and high frequency applications. In: CS MANTECH conference. Vancouver, British Columbia, Canada; 2006.
4. Surface-related drain current dispersion effects in AlGaN-GaN HEMTs;Meneghesso;IEEE Trans Electron Dev,2004
5. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method;Xi;Appl Phys Lett,2004
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