Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. A 3000 hours DC life test on AlGaN/GaN HEMT for RF and microwave applications;Sozza;Microelectron. Reliab.,2005
2. Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test;Ronchi;Microelectron. Reliab.,2009
3. Ionizing Radiation Effects In MOS Devices and Circuits;Ma,1989
4. Characterization and modeling of hot carrier injection in LDMOS for L-band radar application;Lachéze;Microelectron. Reliab.,2011
5. Modeling of stress-induced leakage current and impact ionization in MOS devices;Ielminia;Solid-State Electron.,2002
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