ELDRS in SiGe transistors for room and low-temperature irradiation-Reference-Cited by-同舟云学术

ELDRS in SiGe transistors for room and low-temperature irradiation

Published:2016-08 Issue: Volume:63 Page:56-59
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Pershenkov V.S.,Bakerenkov A.S.,Felitsyn V.A.,Rodin A.S.,Telets V.A.,Belyakov V.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Radiation Effects in SiGe Technology;Cressler;IEEE Trans. Nucl. Sci.,2013

2. The effects of irradiation temperature on the proton response of SiGe HBTs;Prakash;IEEE Trans. Nucl. Sci.,2006

3. Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications;Ullan;Nucl. Inst. Methods Phys. Res. A,2013

4. Radiation effects in bipolar transistors baised on silicon-germanium heterostructures;Gromov,2009

5. Simulation of bulk ionization effects in SOI devices;Skorobogatov;Russ. Microelectron.,1998

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Automated System of Lowered Temperature Setting for Long-Term Radiation Experiments;2021 International Siberian Conference on Control and Communications (SIBCON);2021-05-13

2. Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes;Microelectronics Reliability;2019-12

3. Investigation of total dose effects in SiGe HBTs under different exposure conditions;Radiation Physics and Chemistry;2018-10

4. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates;Nuclear Science and Techniques;2017-09-09