Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates-Reference-Cited by-同舟云学术

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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

Published:2017-09-09 Issue:10 Volume:28 Page:
ISSN:1001-8042
Container-title:Nuclear Science and Techniques
language:en
Short-container-title:NUCL SCI TECH

Author:

Wang Qian-Qiong,Liu Hong-Xia,Wang Shu-Long,Fei Chen-Xi,Zhao Dong-Dong,Chen Shu-Peng,Chen Wei

Publisher

Springer Science and Business Media LLC

Subject

Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://link.springer.com/article/10.1007/s41365-017-0295-7/fulltext.html

Reference26 articles.

1. S.S. Rathod, A.K. Saxena, S. Dasgupta, Alpha-particle-induced effects in partially depleted silicon on insulator devices: with and without contact. IET Circuits Devices Syst. 5, 52–58 (2011). doi: 10.1049/iet-cds.2010.0080

2. N. Vinodhkumar, Y.V. Bhuvaneshwari, K.K. Nagaraian et al., Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation. Microelectron. Reliab. 55, 2647–2653 (2015). doi: 10.1016/j.microrel.2015.09.011

3. J.X. Lou, J. Chen, Z. Chai et al., Total dose effects in tunnel-diode body-contact SOI nMOSFETs. IEEE Trans. Nucl. Sci. 61, 3018–3022 (2014). doi: 10.1109/TNS.2014.2364923

4. C. Peng, Z.Y. Hu, B.X. Ning et al., Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET. Solid State Electron. 106, 81–86 (2015). doi: 10.1016/j.sse.2015.01.023

5. X. Wu, W. Lu, X. Wang et al., Influence of channel length and layout on TID for 0.18 μm NMOS transistors. Nucl. Sci. Tech. 24, 060202–060206 (2013). doi: 10.13538/j.1001-8042/nst.2013.06.019

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1. A study on the influence of dose rate on total ionizing dose effect of anti-fuse field programmable gate array—The irradiation damage is attenuated at low dose rate;Frontiers in Physics;2022-10-28

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