1. Single-Chip Boost Converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT;Chen;IEEE Electron Device Lett.,2009
2. Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters;Chen,2008
3. Critical design issues for high-power GaN/AlGaN anti-serial Schottky varactor frequency triplers;Shah;Microelectron. J.,2012
4. S. C. Lee, C. Her, S. S. Kim, M. W. Ha, K. S. Seo, Y. Choi, M. K. Han. “A New Vertical GaN Schottky Barrier Diode with Floating Metal Ring for High Breakdown Voltage” Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu.
5. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment;Cai;IEEE Electron Device Lett.,2005