Critical design issues for high-power GaN/AlGaN anti-serial Schottky varactor frequency triplers

Author:

Shah P.B.,Hung H.A.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. C. Jin, D. Pavlidis, L. Considine, A novel GaN-based high frequency varactor diode, in: Proceedings of the 5th European Microwave Integrated Circuits Conference, 2010, pp. 118–121.

2. InGaN/GaN Schottky diodes with enhanced voltage handling capability for varactor applications;Lu;IEEE Electron Device Lett.,2010

3. Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures;Marso;IEEE Electron Device Lett.,2006

4. Power generation at millimeter-wave frequencies using GaAs/GaAlAs triplers;Krach;Phys. Status Solidi (c),2004

5. Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors;Saglam;Appl. Phys. Lett.,2003

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