Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Interface-trap generation at ultrathin SiO2 (4–6nm)-Si interfaces during negative-bias temperature aging;Ogawa;J. Appl. Phys.,1995
2. The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on mosfet scaling;Kimizuka,1999
3. The effect of gate oxide thickness and drain bias on NBTI degradation in 45nm PMOS;Hatta,2010
4. Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing;Schroder;J. Appl. Phys.,2003
5. Nbti in nanoscale mosfets—the ultimate modeling benchmark;Grasser;IEEE Trans. Electron Devices,2014
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献