Advanced thermal simulation of SiGe:C HBTs including back-end-of-line-Reference-Cited by-同舟云学术

Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

Published:2016-12 Issue: Volume:67 Page:38-45
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

d'Alessandro Vincenzo^ORCID,Magnani Alessandro^ORCID,Codecasa Lorenzo,Rinaldi Niccolò,Aufinger Klaus

Funder

European Commission

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Silicon-Germanium Heterojunction Bipolar Transistors;Cressler,2003

2. A retrospective on the SiGe HBT: what we do know, what we don't know, and what we would like to know better;Cressler,2013

3. SiGe HBT technology: future trends and TCAD-based roadmap;Schröter;Proc. IEEE,2016

4. A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400GHz fMAX;Chevalier,2009

5. Towards THz SiGe HBTs;Chevalier,2011

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