An enhanced MOSFET threshold voltage model for the 6–300 K temperature range-Reference-Cited by-同舟云学术

An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Published:2017-02 Issue: Volume:69 Page:36-39
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Dao Nguyen Cong,Kass Abdallah El,Azghadi Mostafa Rahimi,Jin Craig T.,Scott Jonathan,Leong Philip H.W.

Funder

University of Sydney

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Revisiting MOSFET threshold voltage extraction methods;Ortiz-Conde;Microelectron. Reliab.,2013

5. Brief review of the MOS device physics for low temperature electronics;Balestra;Solid State Electron.,1994

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