Author:
Salm Cora,Hoekstra Eric,Kolhatkar Jay S.,Hof André J.,Wallinga Hans,Schmitz Jurriaan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Flicker noise in hot electron degraded short channel MOSFETs;Stegherr;Solid State Electron,1984
2. Abbas S, Dockerty R. N-channel IGFET design limitations due to hot electron trapping. In: Techn dig international electron device meeting (IEDM), 1975. p. 35–8.
3. Effect of long-term stress on IGFET degradation due to hot electron trapping;Matsumoto;IEEE Trans Elect Dev,1981
4. MOSFET 1/f noise measurement under switched bias conditions;van der Wel;IEEE Elect Dev Lett,2000
5. The impact of deuterated CMOS processing on gate oxide reliability;Hof;IEEE Trans Elect Dev,2005
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献