Experimental evaluation of hot-carrier stressed series-tuned injection-locked frequency divider-Reference-Cited by-同舟云学术

Experimental evaluation of hot-carrier stressed series-tuned injection-locked frequency divider

Published:2014-03-19 Issue:1 Volume:80 Page:133-139
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Jang Sheng-Lyang,Huang Jhin-Fang,Fu Cong-Chao,Juang Miin-Horng

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/s10470-014-0283-3.pdf

Reference13 articles.

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2. Hu, C., Tam, S. C., Hsu, F.-C., Ko, P.-K., Chan, T.-Y., & Terrill, K. W. (1985). Hot-electron-induced MOSFET degradation—Model, monitor, and improvement. IEEE Journal of Solid-State Circuits, SSC-20(1), 295–305.

3. Liu, S–. S., Jang, S.-L., & Chyau, C.-G. (1998). Compact LDD nMOSFET degradation model. IEEE Transactions on Electron Devices, 45(7), 1538–1547.

4. Rategh, H. R., & Lee, T. H. (1999). Superharmonic injection-locked frequency dividers. IEEE Journal of Solid-State Circuits, 34(6), 813–821.

5. Chuang, Y.-H., Lee, S.-H., Yen, R.-H., Jang, S.-L., Lee, J.-F., & Juang, M.-H. (2006). A wide locking range and low voltage CMOS direct injection-locked frequency divider. IEEE Microwave and Wireless Components Letters, 16(5), 299–301.

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