Over-voltage stressed dual-resonance injection-locked frequency divider with series-peaking injection device-Reference-Cited by-同舟云学术

Over-voltage stressed dual-resonance injection-locked frequency divider with series-peaking injection device

Published:2014-10-02 Issue:3 Volume:81 Page:789-795
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Huang Jhin-Fang,Jang Sheng-Lyang,Liu Wen-Cheng,Juang Miin-Horng

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/s10470-014-0416-8.pdf

Reference9 articles.

1. Takeda, E., & Yang, C. Y. (1995). Hot-carrier effects in MOS devices. San Diego: Academic Press.

2. Groves, A., & Scott, D. B. (1985). Reliability effects on MOS transistors due to hot-carrier injection. IEEE Transactions on Electron Devices, ED-32, 386–393.

3. Tiebout, M. (2003). A 50 GHz direct injection locked oscillator topology as low power frequency divider in 0.13 μm CMOS. In Proceedings European Solid-State Circuits Conference (ESSCIRC) (pp. 73–76).

4. Javid, B., & Heydari, P. (2009). A BiCMOS dual-band millimeter-wave frequency synthesizer for automotive radars. IEEE Journal of Solid-State Circuits, 44(8), 2100–2113.

5. Jang, S.-L., & Hsieh, J.-H. (2013). RF performance degradation in CMOS divide-by-3 injection-locked frequency divider due to hot carrier Effects. J. Low Power Electronics, 9(4), 484–489.

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