Flicker noise in hot electron degraded short channel MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
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1. Low-frequency noise in hot-carrier degraded nMOSFETs;Microelectronics Reliability;2007-04
2. Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation;IEEE Electron Device Letters;2005-10
3. The Impact of Deuterated CMOS Processing on Gate Oxide Reliability;IEEE Transactions on Electron Devices;2005-09
4. Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs;Solid-State Electronics;2005-04
5. Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (1/f) noise behaviour;Microelectronics Reliability;1998-06
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