High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications

Author:

de Veen P.J.,Bos C.,Hoogstede D.R.,Revenberg C.Th.A.,Liljeholm J.,Ebefors T.

Funder

EPAMO

ENIAC JU

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Vertical integration of stacked DRAM and high-speed logic device using SMAFTI technology;Kurita;IEEE Trans Adv Package,2009

2. 3D MEMS wafer level packaging exemplified by RF characterized TSVs & TGVs and integration of bonding processes;Liljeholm,2014

3. The development and evaluation of RF TSV for 3D IPD applications;Ebefors,2013

4. Through-silicon vias and 3D inductors for RF applications;Ebefors;Microw J (Int. Ed.),2014

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