Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon-Reference-Cited by-同舟云学术

Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

Published:2022-11 Issue: Volume:138 Page:114714
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zenari M.,Buffolo M.,De Santi C.,Shang C.,Hughes E.,Wan Y.,Herrick R.W.,Meneghesso G.,Zanoni E.,Bowers J.,Meneghini M.

Funder

Defense Advanced Research Projects Agency

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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4. Perspective: the future of quantum dot photonic integrated circuits;Norman;APL Photon.,2018

5. Quantum dots: promises and accomplishments;Bimberg;Mater. Today,2011

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2. Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization;ACS Photonics;2023-11-11

3. Degradation Processes and Aging in Quantum Dot Lasers on Silicon;CLEO 2023;2023