Author:
Meneghini Matteo,Buffolo Matteo,Zenari Michele,De Santi Carlo,Herrick Robert W.,Shang Chen,Wan Yating,Feng Kaiyin,Hughes Eamonn,Bowers John,Meneghesso Gaudenzio,Zanoni Enrico
Abstract
We discuss the physical processes for the degradation of quantum-dot lasers epitaxially grown on silicon. Through combined electro-optical measurements and deep-level transient spectroscopy, we conclude a pathway to obtain significant improvement in device lifetime.