Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate-Reference-Cited by-同舟云学术

Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate

Published:2012-04 Issue:4 Volume:52 Page:692-697
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hu Shengdong,Luo Jun,Tan Kaizhou,Zhang Ling,Li Zhaoji,Zhang Bo,Zhou Jianlin,Gan Ping,Qin Guolin,Zhang Zhengyuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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4. Merchant S, Arnold E, Baumgart H. Realization of high breakdown voltage (>700V) in thin SOI devices. In: Proceedings of the international symposium on power semiconductor devices and ICs, Baltimore, MD; 1991. p. 31–5.

5. Paul AK, Leung YK, Plummer JD, Wong SS, Kuehne SC, Huang VSK, et al. High voltage LDMOS transistors in sub-micron SO1 films. In: Proceedings of the international symposium on power semiconductor devices and ICs, Maui, Hawaii; 1996. p. 89–92.

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