A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate

Published:2016-01 Issue: Volume:89 Page:59-67
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chen Yinhui,Hu Shengdong,Cheng Kun,Jiang YuYu,Luo Jun,Wang Jian'an,Tang Fang,Zhou Xichuan,Zhou Jianlin,Gan Ping

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. SOI-based devices and technologies for high voltage ICs;Udrea,2007

2. SOI high voltage device with step thickness sustained voltage layer;Luo;Electron. Lett.,2008

3. A novel high-voltage (> 600 V) LDMOSFET with buried N-Layer in partial SOI technology;Hu;IEEE Trans. Electron Devices,2012

4. Design of a novel compound buried layer SOI high voltage device with double windows;Hu;Electron Lett.,2010

5. Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate;Hu;Microelectron. Reliab.,2012

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study;Semiconductor Science and Technology;2024-05-20

2. A Novel High Performance SOI LDMOS with Buried Stepped Gate Field Plate;Transactions on Electrical and Electronic Materials;2023-09-30

3. Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect;Engineering Research Express;2023-08-29

4. Simulation and experimental study on a high figure of merit LDMOS with ingenious layout design;Semiconductor Science and Technology;2022-04-28

5. Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept;Japanese Journal of Applied Physics;2021-03-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3