Author:
Tam Wing-Shan,Siu Sik-Lam,Yang Bing-Liang,Kok Chi-Wah,Wong Hei
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers;Borionetti;Mater Sci Eng B,2000
2. Semiconductor material and device characterization;Schroder,2006
3. A new vertical power MOSFET structure with extremely reduced on-resistance;Ueda;IEEE Trans Electron Dev,1985
4. Dyer T, McGinty J, Strachan A, Bulucea C. Monolithic integration of trench vertical DMOS (VDMOS) power transistors into a BCD process. In: Proceedings of the international symposium on power semiconductor devices & IC’s. Santa Barbara, CA; 2005. p. 47–50.
5. Ji IH, Cho KH, Han MK, Lee SC, Kim SS, Oh KH, et al. New power MOS-FET employing segmented trench body contact for improving the avalanche energy. In: Proceedings of the international symposium on power semiconductor devices & IC’s. Orlando, Florida; 2008. p. 115–8.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献