Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs-Reference-Cited by-同舟云学术

Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs

Published:2011-12 Issue:12 Volume:51 Page:2163-2167
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chiu Hsien-Chin,Lin Chao-Wei,Lin Che-Kai,Kao Hsuan-Ling,Fu Jeffrey S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. Enhancement mode high electron mobility transistors (E-HEMT’s) lattice-matched to InP;Mahajan;IEEE Trans Electron Dev,1998

4. Harada N, Kuroda S, Katakami T, Hirosaka K, Mimura T, Abe M. Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large scale integration. In: Proc 3rd indium phosphide and related mater conf. p. 377–80.

5. Cao J, Wang XW, Quek CK, Singh R, Nakamura R. A 3.2 V, 45% efficient, novel class AB+C CDMA MMIC power amplifier using quasi enhancement mode pHEMTs. IEEE radio frequency integrated circuits symp. June 11–13 2000. p. 93–6.

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