Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications-Reference-Cited by-同舟云学术

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

Published:2021-07-30 Issue:18 Volume:218 Page:2100151
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jia Yeting¹²³⁴,Wang Quan¹⁴⁵,Chen Changxi¹²³⁴,Feng Chun¹²³⁴,Li Wei¹²³⁴,Jiang Lijuan¹²³⁴,Xiao Hongling¹²³⁴,Wang Qian¹⁴,Xu Xiangang⁵,Wang Xiaoliang¹²³⁴^ORCID

Affiliation:

1. Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100 083 China

2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100 049 China

3. School of Microelectronics University of Chinese Academy of Sciences Beijing 100 049 China

4. Institute of Semiconductors, Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100 083 China

5. State Key Laboratory of Crystal Materials Shandong University Jinan 250 100 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100151

Reference40 articles.

1. Application of GaN in 5G Technology

2. A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

3. High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

4. X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

5. High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing;Engineering Research Express;2024-04-22

2. Effects of electron irradiation on analog and linearity performance of InP-based HEMT;Applied Physics A;2023-10-18

3. Analysis of InGaN Back-Barrier on Linearity and RF Performance in a Graded-Channel HEMT;Journal of Electronic Materials;2022-12-08

4. Improvement of DC and f _T performances of graded-channel HEMTs by polarization engineering;Semiconductor Science and Technology;2022-08-19