X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors-Reference-Cited by-同舟云学术

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X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

Published:2018-12 Issue:12 Volume:39 Page:1884-1887
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sohel Shahadat H.^ORCID,Xie Andy,Beam Edward,Xue Hao,Roussos Jason A.,Razzak Towhidur^ORCID,Bajaj Sanyam^ORCID,Cao Yu,Meyer David J.^ORCID,Lu Wu,Rajan Siddharth

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8543518/08485343.pdf?arnumber=8485343

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4. Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages;IEEE Transactions on Electron Devices;2024-03

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