Heat capacities, entropies, and Gibbs free energies of formation of low-k amorphous Si(O)CH dielectric films and implications for stability during processing-Reference-Cited by-同舟云学术

Heat capacities, entropies, and Gibbs free energies of formation of low-k amorphous Si(O)CH dielectric films and implications for stability during processing

Published:2019-01 Issue: Volume:128 Page:320-335
ISSN:0021-9614
Container-title:The Journal of Chemical Thermodynamics
language:en
Short-container-title:The Journal of Chemical Thermodynamics

Author:

Chen Jiewei,Calvin Jason,Asplund Megan,King Sean W.,Woodfield Brian F.,Navrotsky Alexandra

Funder

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Materials Science,Atomic and Molecular Physics, and Optics

Reference48 articles.

1. Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics

2. Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems

3. Surface Damage Resistance of Gel-Derived Oxycarbide Glasses: Hardness, Toughness, and Scratchability

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