Size effect on compression properties of GaN nanocones examined using in situ transmission electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference45 articles.
1. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
2. Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
3. High conductivity modulation doped AlGaN/GaN multiple channel heterostructures
4. Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
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