Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1588379
Reference5 articles.
1. Stress and Defect Control in GaN Using Low Temperature Interlayers
2. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures
3. Intrinsic exciton transitions in GaN
4. Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction
5. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
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