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Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC

  • Published:2018-01 Issue: Volume:731 Page:1267-1274
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Zhang Yimeng,Guo Tao,Tang Xiaoyan,Yang Jie,He Yanjing,Zhang Yuming

Funder

Natural Science Foundation of China

National Key Basic Research Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. The thermal stability study and improvement of 4h-sic ohmic contact;Liu;Appl. Phys. Lett.,2014

2. Thermal stability of ni/ti/al ohmic contacts to p-type 4h-sic;Yu;J. Appl. Phys.,2015

3. Stable electrical operation of 6h-sic jfets and ics for thousands of hours at 500 °C;Neudeck;IEEE Electron. Device Lett.,2008

4. Ti/al/w ohmic contacts to p-type implanted 4h-sic;Vivona;J. Appl. Phys.,2015

5. Development of an extreme high temperature n-type ohmic contact to silicon carbide;Evans,2012

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