Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927271
Reference30 articles.
1. OHMIC CONTACTS TO SIC
2. Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing
3. Critical issues for interfaces to p-type SiC and GaN in power devices
4. Contact resistance measurements onp‐type 6H‐SiC
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2. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08
3. Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer;Applied Physics Letters;2024-01-01
4. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024
5. Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area;IEEE Electron Device Letters;2023-09
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