Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers
Author:
Funder
Ministry of Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference26 articles.
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2. ON-state degradation in AlGaN/GaN-on-silicon Schottky barrier diodes: investigation of the geometry dependence;Tallarico;IEEE Trans. Electron Devices,2016
3. Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes;Ren;Microelectron. Reliab.,2016
4. Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate;Hu;IEEE Trans. Electron Devices,2016
5. High-voltage and low-leakage AlGaN/GaN tri-anode Schottky diodes with integrated tri-gate transistors;Ma;IEEE Electron Device Lett.,2017
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1. The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications;Electronics;2021-11-15
2. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07
3. Interfacial reactions to form high-barrier-height ITO-based Schottky contacts on p-type GaN using a Ti interlayer;Journal of Alloys and Compounds;2018-04
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