Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes-Reference-Cited by-同舟云学术

Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes

Published:2016-06 Issue: Volume:61 Page:82-86
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ren Jian,Yan Dawei,Zhai Yang,Mou Wenjie,Gu Xiaofeng

Funder

China Postdoctoral Science Foundation

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Graduate Student Innovation Program for University of Jiangsu Province

Summit of the Six Top Talents Program of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates;Arslan;J. Appl. Phys.,2008

2. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer;Corekci;J. Appl. Phys.,2007

3. AlGaN/AlN/GaN high-power microwave HEMT;Shen;IEEE Electron Device Lett.,2001

4. Critical voltage for electrical degradation of GaN high-electron mobility transistors;Joh;IEEE Electron Device Lett.,2008

5. Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias;Meneghini;Appl. Phys. Lett.,2012

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1. Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser;Scientific Reports;2023-09-02

2. Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices;Revista Mexicana de Física;2023-05-01

3. Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser;2023-02-01

4. ALD growth of ZnO on GaN: Schottky barrier height engineering using ZnO interlayer;Materials Today Communications;2022-12

5. Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition;Coatings;2020-02-24